High sheet resistance emitter for improved efficiency by wet etching processes
Front metallization is a key process in the crystalline silicon solar cell production,and one of the important points for realizing the higher conversion efficiencies is the reduction of the recombination losses at the front surface.To decrease the recombination velocity at the front surface,the emitter sheet resistance must be increased by controlling the doping concentration.Y.Komatsu et al.introduced an artificial process in phosphorus doping (P)(1).The controlling of the furnace temperature and the diffusion time realize the low P concentration in the emitter layer.In this paper,we present the emitter layer fabrication with wet etching process.The sheet resistance of emitter layer was controlled by changing the etching conditions.The solar cells were fabricated to evaluate the effects of doping profile in the emitter layer.Additionally a new paste a new grid pattern for a high sheet resistance emitter are also need to be developed to realize high performance cells.
M.Aoki Y.Kumaga Y.Ohshita T.Kojima N.Kojima A.Harada T.Tachibana A.Ogura Y.Kawata H.Sato
Toyota technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya, 468-8511, Japan Meiji University, 1-1-1, Higashimita, Tama-ku, Kawasaki, 214-8571, Japan Y.A.C.Co.,Ltd.,3-11-10 Musashino, Akishima 196-0021, Japan
国际会议
The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)
杭州
英文
1-5
2012-11-05（万方平台首次上网日期，不代表论文的发表时间）