Boron-doped Microcrystalline Silicon Thin Layers as Emitters for Solar cell Fabricated by ECR-CVD
In this study,we investigated the structural and electrical properties of the boron-doped hydrogenated microcrystal- line silicon (μc-Si:H) thin film as an emitter with the aim to increase the short current density (Jsc) in silicon solar cells.These emitters show high concentration (3.3×1020 cm-3) and low resistivity (1.1×10-3 cm-3) which were deposited at low temperature by using electron cyclotron resonance chemical vapor deposition (ECR-CVD).In additional,we measured the boron-doped μc-Si:H thin films by spectroscopic ellipsometry to extract their crystalline fraction and thickness.We found that the Jsc of our silicon solar cells is increased with higher crystalline fraction under higher hydrogen dilution.And we can get a high Jsc about 38 mA/cm2 for emitter with crystalline fraction about 33%.
Y.H.Chu T.H.Chang C.C.Lee J.Y.Chang
Department of Optics and Photonics, National Central University, Jhongli 320, R.O.C Optical Science Center, National Central University, Jhongli 320, R.O.C
国际会议
The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)
杭州
英文
1-4
2012-11-05（万方平台首次上网日期，不代表论文的发表时间）