Doping silicon wafers by use of silicon paste

摘要：

　　We introduce recently developed Si-paste-enabled p-type doping.B-doped Si nanoparticles (NPs) are dispersed in solvents to form Si paste.Si paste is screen-printed at the surface of Si wafers.By means of annealing B atoms in Si paste diffuse into Si wafers.Secondary ion mass spectroscopy (SIMS) and sheet resistance measurements indicate successful B doping.

作者: Yu Gao Xiaodong Pi Deren Yang

作者单位: State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

会议类型: 国际会议

会议名称: The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)

会议地点: 杭州

会议语种:英文

页码: 1-3

在线出版日期: 2012-11-05（万方平台首次上网日期，不代表论文的发表时间）