Progress with industrially feasible passivation of lightly and heavily doped n-type silicon surfaces using inline PECVD silicon nitride
An ultra-low effective surface recom-bination velocity (Seff) of 2.0 cm/s was obtained on moderately doped n-type Cz silicon.Such a low Seff value was previously only attainable for SiNx films deposited statically in lab-scale reactors.When applied to a phosphorus diffused n+-type c-Si surface,these SiNx films demonstrate an extremely low saturation current density J0e of 14 fA/cm2 on 150 Ω/sq planar n+ layers.For pyramid textured n+ layers the J0e values were found to be 1.2 to 2.2 times larger compared to their planar counterparts.These values are comparable to the best published laboratory results,despite the fact that our films were deposited in an industrial reactor and using industrial process conditions.
Shubham Duttagupta Bram Hoex Armin G.Aberle
Solar Energy Research Institute of Singapore, National University of Singapore, Singapore 117574, Si Solar Energy Research Institute of Singapore, National University of Singapore, Singapore 117574, Si
国际会议
The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)
杭州
英文
1-4
2012-11-05（万方平台首次上网日期，不代表论文的发表时间）