Defect elimination of solid phase crystallized Poly-Si seed layer on glass by diode laser annealing
In order to get high quality of thin film crystalline,seed layer approach is a promising method to create crystalline Si on the non-silicon inexpensive substrates.The thin crystalline seed layer is firstly made and then epitaxial thickened on this seed layer.Solid phase crystallized poly-Si seed layer (SPC seed layer) is a good candidate among the methods for creating seed layer for the advantages such as relatively easy process,sufficient throughput and non-metal incorporation.However,the presence of microtwins in the SPC seed layer is strongly detrimental to the quality of the epi-layer which duplicates the crystal information from the seed through epitaxial growth.Fortunately,microtwins in poly-Si films are unstable and can be drastically eliminated above 750℃.Laser annealing could quickly heat up Poly-Si film to the temperature higher than 750℃ but glass substrate is still kept at low temperature without any melting or deformation.In this study,thin poly-Si seed layer was fabricated from poly-Si crystallized by a two-step annealing process on glass substrates.The combination of low-temperature furnace annealing and diode laser annealing leads to a significant improvement in the structural and electric quality of SPC seed layer.It is found that laser annealing could dramatically reduce the defect density,activate the doping and increase the hall mobility of SPC Si seed layer.
Wei Li Jonathon Dore Sergey Varlamov Martin Green
School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, AUSTRALIA
国际会议
The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)
杭州
英文
1-4
2012-11-05（万方平台首次上网日期，不代表论文的发表时间）