Boron back surface field made by laser doping for the thinner crystalline solar cell
In order to reduce the cost of solar cell,the wafer is becoming thinner and thinner with the improvements of slicing technology.The bow problem of screen printed aluminum back surface field(Al-BSF) makes a big obstacle for the thinner crystalline solar cell.The boron doping on back surface can make a better BSF without bow problem but the boron diffusion needs a high temperature and longtime process due to the low diffusion coefficient of boron in solid silicon.The noval laser doping method for B-BSF is investigated in this work.It is confirmed by SEM that the laser pulse can melt the boron source(B2O3) and the surface Si,so the B atoms can diffuse into the Si more quickly in its liquid phase.The peak boron concentrations of profiles measured by ECV test are higher than 8×1018atoms/cm3,and the doping depth can be well controlled by changing the laser power.
Shouliang Sun Hao Song Dianlei Wang Zongcun Liang
Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510006, CHINA
国际会议
The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)
杭州
英文
1-4
2012-11-05（万方平台首次上网日期，不代表论文的发表时间）