Surface Passivation on Crystalline Silicon with Low Optical Reflectivity and Low Surface Recombination Velocity

摘要：

　　Low surface recombination velocity (SRV) and low optical reflectivity of crystalline silicon (c-Si) are achieved by using silicon-nitride (SiNx) /amorphoussilicon (a-Si) stacked passivation layers prepared by catalytic chemical vapor deposition (Cat-CVD).The reflectivity lower than 1% for wavelength of 540 nm to 750 nm is obtained keeping SRV lower than 5 cm/s,when a pyramidshape textured surface is formed by chemical etching and Cat-CVD SiNx/ a-Si stacked layers are deposited on it after well defined chemical cleaning process.

作者: Hideki Matsumura Kazuya Katoh Koichi Koyama Keisuke Ohdaira

作者单位: Japan Adv.Inst.Sci.& Tech.(JAIST), Nomi-shi, Ishikawa-ken 912-1292 JAPAN

会议类型: 国际会议

会议名称: The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)

会议地点: 杭州

会议语种:英文

页码: 1-4

在线出版日期: 2012-11-05（万方平台首次上网日期，不代表论文的发表时间）