Impact of minority-impurity scattering on the carrier mobility in compensated silicon

摘要：

　　In this paper,we review two different determinations of the minority impurity scattering in silicon.We show that an improper determination of minority impurity scattering can lead to potential errors in the modeling of carrier mobilities in compensated silicon.Early experimental results show that the effect of minority impurities may be underestimated in Klaassens commonly used model.

作者: F.E.Rougieux M.Forster D.Macdonald A.Cuevas

作者单位: Research School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 0200, AUSTRALIA

会议类型: 国际会议

会议名称: The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)

会议地点: 杭州

会议语种:英文

页码: 1-4

在线出版日期: 2012-11-05（万方平台首次上网日期，不代表论文的发表时间）