Low Temperature Doping of P and B atoms into Crystalline Si by Catalytically Generated Species from PH3 and B2H6
Shallow phosphorus (P)- and boron (B)-doped layers are formed on the surface of a crystalline silicon (c-Si) wafer by exposing it to species generated by cracking reaction of phosphine (PH3) or diborane (B2H6) gas molecules with heated tungsten (W) filament in Cat-CVD (catalytic chemical vapor deposition) apparatus.It is discovered that the conduction type of c-Si surface is converted to n-type or p-type by the exposure in PH3-decomposed species or B2H6 decomposed species,respectively,even at the substrate temperatures as low as 80℃ to 350℃.Profiles of P atoms or B atoms are observed by secondary ion mass spectroscopy (SIMS) to confirm the penetration of these atoms into c-Si,and it is known that the penetration depth is quiet shallow less than 10 nm.
Tatsunori Ohta Koichi Koyama Keisuke Ohdaira Hideki Matsumura
Japan Advanced Institute of Science and Technology(JAIST)1-1 Asahidai, Nomi-shi, Ishikawa-ken 923-1292,JAPAN
国际会议
The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)
杭州
英文
1-4
2012-11-05（万方平台首次上网日期，不代表论文的发表时间）