Study of PECVD Silicon Nitride for Surface and Bulk Passivation of Silicon Solar Cell using Quantum Efficiency

摘要：

　　Plasma enhanced chemical vapor deposition (PECVD) hydrogenated silicon nitride (SiNx:H) films are extensively used as antireflection coating (ARC) for crystalline silicon solar cells and in particular for its surface and bulk passivation.In this study,silicon nitride films deposited on low resistivity 1.5Ω.cm p-type mono-crystalline silicon solar substrates by a high-frequency (HF),low temperature direct PECVD system have been investigated.The deposition parameters were optimized using a Design of Experiments (DOE) method.After sample fabrication,spectral response (SR) and quantum efficiency (QE) measurement were carried out using a photovoltaic spectral response system.A simple and reliable method was developed to quantify and evaluate the surface and bulk passivation.

作者: He Qun Ho Soon Seng Low Lee Ngo

作者单位: Singapore Polytechnic, School of EEE, 500 Dover Road Singapore 139651

会议类型: 国际会议

会议名称: The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)

会议地点: 杭州

会议语种:英文

页码: 1-4

在线出版日期: 2012-11-05（万方平台首次上网日期，不代表论文的发表时间）