A-SiGe:H Solar Cell And Its Preliminary Application In Triple-Junction Solar Cells
This work reports our efforts on improving the performance of hydrogenated amorphous silicon germanium (a-SiGe: H) single junction solar cell that is used in middle cell in triple-junction and the latest research developments of triple-junction solar cells(a-Si:H/a-SiGe:H/μc-Si:H) in our laboratory.First,we optimized the fabrication condition of individual a-SiGe: H solar cell for an application to the middle cell.We found that Voc and FF deteriorated when germanium fraction in absorber layers increases for improving the long wavelength response.We demonstrate that by inserting properly controlled buffer layer between PI and IN interfaces1 and a properly graded Ge fraction along the absorb layer depth profile2,Voc and FF of the a-SiGe: H solar cell got improved without the loss of the spectral response at long wavelength.Second,we applied the improved a-SiGe:H component cell in a-Si:H/a-SiGe:H/.c-Si:H triple-junction structures,optimized the top/middle tunnel-junction and the middle/bottom tunnel-junction and attained an initial cell efficiency of near 13%.
Bofei Liu Xiaodan Zhang Lisha Bai Jian Ni Qian Huang Xu Yang Huixu Zhao Changchui wei Jian Sun Ying Zhao
Institute of Photo Electronics thin Film Devices and Technology of Nankai University, Key Laboratory of Photoelectronic Thin Film Devices and Technology, Tianjin 300071, P.R.China
国际会议
The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)
杭州
英文
1-4
2012-11-05（万方平台首次上网日期，不代表论文的发表时间）