Optical properties and growth rates of silicon films deposited from free jet activated by electron beam plasma

摘要：

　　Layers of intrinsic hydrogenated amorphous silicon (a-Si:H) are deposited by gas jet CVD method with electron beam activation from mixture of silane with diluent gas (argon,helium,hydrogen) on glass and stainless steel substrates.Optical properties (refractive index,absorption coefficient,optical band gap) and thickness of silicon thin films are determined with help of envelope method and PUMA code from optical transmission and reflection spectra.Influence of substrate temperature and hydrogen dilution of silane on the optical properties also is obtained.Silicon film deposition rate dependences on gas-diluent flow rate and substrate temperature were taken.Addition of gas-diluent to silane provides strong effect on deposition rate depending on gas sort.

作者: Eugene Baranov Alexander Zamchiy Sergey Khmel

作者单位: Institute of Thermophysics, Siberian Branch of the Russian Academy of Sciences, Lavrentiev Ave.1,630 Institute of Thermophysics, Siberian Branch of the Russian Academy of Sciences, Lavrentiev Ave.1,630

会议类型: 国际会议

会议名称: The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)

会议地点: 杭州

会议语种:英文

页码: 1-4

在线出版日期: 2012-11-05（万方平台首次上网日期，不代表论文的发表时间）