Influence of hydrogen dilution ratio and substrate roughness on the microstructure of intrinsic microcrystalline silicon thin films
Intrinsic microcrystalline silicon (μc-Si:H) thin films were deposited on four kinds of substrates (polished quartz glass: PG,Rough quartz glass: RG,Textured SnO2:F coated glass: TG,Textured ZnO:Al coated glass: ZG) by 13.56 MHz plasma enhanced chemical vapor deposition (PECVD) with different hydrogen dilution ratio (RH=H2/SiH4) under the pressure of 2 Torr.The film thickness,crystalline volume fraction (XC) and substrate surface roughness (Ra) were measured by surface profilometer,Raman spectra and atom force microscopy (AFM),respectively.The results revealed that with the increase of RH,the deposition rate decreased and XC increased monotonously for the films deposited on the same substrate,but the substrate Ra had an obvious impact on the film microstructure.A physical model was proposed to illustrate the growth of the μc-Si:H thin films deposited on substrates with different Ra.
Baojun Yan Lei Zhao Hongwei Diao Guanghong Wang Jingwei Chen Wenjing Wang
Key Laboratory of Solar Thermal Energy and Photovoltaic System of Chinese Academy of Sciences, Institute of Electrical Engineering, the Chinese Academy of Sciences, Beijing 100190, China
国际会议
The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)
杭州
英文
1-4
2012-11-05（万方平台首次上网日期，不代表论文的发表时间）