Photovoltaic effect of large-grain polycrystalline silicon films formed by flash lamp annealing

摘要：

　　Flash lamp annealing (FLA) induces the liquid-phase-epitaxial- (LPE-) based explosive crystallization (EC) of electron-beam- (EB-) evaporated amorphous silicon (a-Si) films,resulting in the formation of polycrystalline Si (poly-Si) films with more than 10 μm-long large grains stretching along EC directions.The suppression of dopant diffusion during FLA is confirmed by scanning spread resistance microscopy (SSRM).We confirmed the photovoltaic effect of the flash-lamp-crystallized (FLC) large-grained poly-Si films with a p-n junction,for the first time,by Suns-Voc method.The open-circuit voltage (Voc) of the as-crystallized FLC poly-Si films is ~240 mV,which is improved to ~300 mV after atomic hydrogen treatment.

作者: K.Ohdaira S.Varlamov

作者单位: Japan Advanced Institute of Science and Technology(JAIST), 1-1 Asahidai, Nomi,Ishikawa 923-1292, JAP University of New South Wales(UNSW), Sydney, NSW 2052, AUSTRALIA

会议类型: 国际会议

会议名称: The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)

会议地点: 杭州

会议语种:英文

页码: 1-4

在线出版日期: 2012-11-05（万方平台首次上网日期，不代表论文的发表时间）