Optimizing p-type microcrystalline silicon thin films by boron profiling technique

摘要：

　　We report on the optimizing of p-type microcrystalline silicon thin films material.P-μc-Si:H was deposited in a large-area VHF-PECVD deposition system by 40.68 MHz.A boron profiling technique,designed by dynamically increasing the boron concentration step by step during the total deposition time of p-μc-Si:H thin films material.The experimental results demonstrate that the Xc and conductivity of p-μc-Si:H thin films material relied on the boron profiling.This boron profiling technique controls the microstructure and electrical characteristics evolution of p-μc-Si:H thin films.Using this method,the uniformity of p-μc-Si:H thin films has been significant improved.

作者: Huizhi Ren Shengzhi Xu Xiaodan Zhang Ying Zhao

作者单位: Institute of Photo-electronic Thin Film Devices and Technology of Nankai University, Tianjin 300071, China

会议类型: 国际会议

会议名称: The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)

会议地点: 杭州

会议语种:英文

页码: 1-4

在线出版日期: 2012-11-05（万方平台首次上网日期，不代表论文的发表时间）