Optimization of open circuit voltage for amorphous silicon solar cells at low temperatures by incorporation of p-type silicon carbide window layers

摘要：

　　P-i-n type hydrogenated amorphous silicon (a-Si:H) solar cells were deposited by RF-PECVD process at a low substrate temperature of 125℃,which is compatible with low-cost PET plastic substrates.High quality p-a-SiC:H film with wide optical band gap (E04=2.02eV) and high conductivity (σd=1.0×10-7S/cm) was deposited at ‘low-power regime’ under low silane flow rates and high H2 dilution conditions.With the combination of wide band gap p-a-SiC:H window layers and intrinsic a-Si:H layers,a high Voc of 1.01V (Efficiency=5.51%,FF=0.72,Jsc=7.58 mA/cm2) was obtained for single junction a-Si:H p-i-n solar cell at a low temperature of 125℃.

作者: Jian Ni Jun Ma Jianjun Zhang Zhenhua Huang Guofu Hou Xinliang Chen Xiaodan Zhang Xinhua Geng Ying Zhao

作者单位: Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University, Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology, Key Laboratory of Opto-Electronic Information Science and Technology, Tianjin 300071, PR China

会议类型: 国际会议

会议名称: The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)

会议地点: 杭州

会议语种:英文

页码: 1-4

在线出版日期: 2012-11-05（万方平台首次上网日期，不代表论文的发表时间）