Highly Conductivity Boron Doped Nanocrystalline Silicon Carbide Fabrication and Its Application for Solar Cell
The boron doped silicon carbide thin films were fabricated by electron cyclotron resonance chemical vapor deposition system (ECR-CVD).We demonstrate that the films the structure of boron doped silicon carbide deposited by ECR-CVD have a-Si,nc-Si,a-SiC,and 3C-SiC and the hydrogen dilution method change the crystalline fraction and crystal size of silicon primitively measured by Raman spectroscopy.The hydrogen dilution method improves not only the structure but also electrical and optical properties.The dark conductivity or it is higher than 0.1 S/cm and the high optical bandgap can be obtained which are very suitable to be the window layer of silicon based solar cell to improve the optical loss and series resistance of it.The silicon based solar cell is undergoing.
Teng-Hsiang Chang Yen-Ho Chu Chien-Chieh Lee Jenq-Yang Chang
Department of Optics and Photonics, National Central University, Taiwan, R.O.C Optical Science Center, National Central University, Taiwan, R.O.C
国际会议
The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)
杭州
英文
1-5
2012-11-05（万方平台首次上网日期，不代表论文的发表时间）