Analytic characterization and Synthesis of Cu2ZnSnS4 thin films grown by pulsed laser deposition
The polycrystalline Cu2ZnSnS4 (CZTS) thin films have been prepared by pulsed laser deposition (PLD) method at room temperature.The laser incident energy at the interval of 1.5-1.7 J/cm2.The polycrystalline CZTS thin films with tetragonal crystal structure have been observed from structural analysis by the measurement of X-ray diffraction (XRD),revealing that these thin films exhibit a strong preferential orientation of grains along (112) direction and small Cu2.xS secondary phase easily appears in the CZTS thin films.SEM images show the smooth,uniform,homogeneous and densely packed grains and increase in the grain size after annealing processing.The results of energy dispersive X-ray spectroscopy (EDX) indicate that these CZTS thin films are phases of Cu-rich and S-poor.The optimized optical band gap of CZTS films grown by PLD is about 1.54 eV,which suggests that CZTS films can be valuable as an absorber layer in thin-film solar cells.
Ting-Wei Kuo Chi-Hwa Cheng Tung-Tung Chen Ching-Hsiang Chiu Chen Yao Ju Horng-Show Koo*
Institute of Electronic Engineering and Department of Optoelectronic System Engineering,Minghsin University of Science and Technology, Hsinfong Hsinchu 304 TAIWAN, R.O.C
国际会议
The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)
杭州
英文
1-5
2012-11-05（万方平台首次上网日期，不代表论文的发表时间）