Phosphorus doping of BaSi2 by ion implantation
Phosphorus doping of BaSi2 epitaxial films by means of PH3 implantation and rapid thermal annealing has been studied from a structural viewpoint.Raman spectroscopy and X-ray diffraction show that the crystal structure of BaSi2 is disordered by PH3 implantation,and that this irradiation damage can be removed by rapid thermal annealing for 30 s at 600–800℃.In addition,the metastable trigonal phase of BaSi2 is found to be formed at 800℃ from highly-damaged films.Furthermore,P atoms have been revealed to segregate into the surface and BaSi2/Si interface at 600 and 700℃ while the P segregation is suppressed at 800℃,according to the secondary ion mass spectroscopy.Thus,we have obtained a useful guide to effectively dope P atoms into the BaSi2 film.
K.O.Hara Y.Hoshi N. Usami Y.Shiraki K.Nakamura K.Nakamura K.Toko T.Suemasu
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, JAPAN Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, JAPAN Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya, Tokyo 158-0082, JA Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, JAP CREST, Japan Science and Technology Agency, Gobancho, Chiyoda, Tokyo 102-0076, JAPAN;Institute of Ap
国际会议
The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)
杭州
英文
1-4
2012-11-05（万方平台首次上网日期，不代表论文的发表时间）