Low temperature atmospheric pressure PE-CVD deposited ZnO front electrodes for PV CIGS cells
Un-doped zinc oxide (ZnO) thin films have been deposited at high growth rates (~ 7 nm/s) and low temperature (200℃) by plasma enhanced chemical vapor deposition at atmospheric pressure.After the deposition,the films are shortly exposed to near UV/visible light to enhance their conductivity.The ZnO films are highly transparent in the visible range (~90%) and low resistive (1.5 10-3 Ohm cm).The photo-enhanced conductivity is stable in time at room temperature when ZnO films are coated by an Al2O3 barrier film,deposited by spatial Atomic Layer Deposition (ALD).ZnO/Al2O3 films have been tested as front electrode on CIGS cells,resulting in efficiencies up to 16%,comparable to reference cells with sputtered ZnO:Al front electrodes.
Illiberi F.Grob P.Poodt G.J.J.Winands M.Simor P.J.Bolt
Netherlands Organization for Applied Scientific Research(TNO), Department of Thin Film Technology, PO Box 6235, 5600 HE Eindhoven,The Netherlands
国际会议
The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)
杭州
英文
1-4
2012-11-05（万方平台首次上网日期，不代表论文的发表时间）