4×4cm2 CIGS thin film solar cells prepared by low-temperature deposition process
CIGS thin film solar cells deposited on the flexible polyimide (PI) substrate has high power to weight ratio and suit to roll-to-roll large scale production.But the PI substrate tolerates the temperature below of 490℃,and the element diffusion rates during the deposition of CIGS thin film will be decreased,then it can lead to the deterioration of crystallinity and uniformity in the CIGS thin films,so the device performance will be poor.Especially,when the area of the CIGS thin film solar cells became larger,the problems became more serious than before.In our work,we prepare the 4×4cm2 CIGS thin films by modified three-stage co-evaporation process on the PI substrate and focus on the growth mechanism in the low-temperature process.The crystalline structure,composition and element distribution are investigated.Simultaneously,the grid of the devices based on the 4×4cm2 CIGS thin films are also optimal design to suit the area increase of device.According to the experimental and modeling results,the device performance is improved finally.
Liu wei Li Zhiguo He Jingjing Li Zuliang Cheng Long Liu Yiming Yi Zhang Sun Yun
Institute of Photo-Electronics Thin Film Devices and Technique, Key laboratory of photo electronics thin film devices and technique of Tianjin, College of Information Technical Science, Nankai University, Tianjin 300071, China
国际会议
The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)
杭州
英文
1-5
2012-11-05（万方平台首次上网日期，不代表论文的发表时间）