Drastic QE enhancement by light-trapping structure in InGaAs/GaAsP multiple quantum-well solar cells
In this study,we propose the structure to trap the light into solar cells to maximize a light absorption especially in optically thin Multiple Quantum Wells (MQWs) layer.The Ray-Tracing calculation method was used to optimize the structure.In all the calculations,basic set-up condition was set 5-μm-thick GaAs p-i-n photovoltaic (PV),cell containing 20-period MQWs layer (400nm in the total thickness) in the intrinsic layer,was assumed on the semi-insulator (SI) GaAs substrate with a front-contact configuration,in order to minimize the parasitic light absorption by the substrate.On the basis of the simulation,we fabricated MQWs solar cell with two types of rear side structure with 6-μm pitch:trapezoid-like shape and a triangular shape.Clear enhancement of quantum efficiency has been observed in both the PV cells in the wavelength range 900-1000nm:1.68 times for the trapezoid structure and 1.90 times for the triangle structure,respectively.
Boram Kim Kentaroh Watanabe Masakazu Sugiyama Yoshiaki Nakano
Department of Electrical Engineering and Information systems, School of Engineering, the University Research Center for Advanced Science and Technology(RCAST), the University of Tokyo, Megoro-ku, Toky Department of Electrical Engineering and Information systems, School of Engineering, the University
国际会议
The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)
杭州
英文
1-4
2012-11-05（万方平台首次上网日期，不代表论文的发表时间）