Dependence of crystallinity of InGaN thin films grown on sapphire substrates having In2O3 underlayers on their compositions

摘要：

　　An In2O3 thin film was grown on a sapphire substrate,and then,some InGaN thin films were grown on it.Variations in crystallinities of the obtained InGaN thin films were evaluated.There were differences in the crystallinity improvement effects by the In2O3 underlayer.Large deteriorations in their crystallinities owing to the underlayer were not observed.

作者: Yuichi Sato Kazuki Ito Masato Iwaki Hiroki Takemoto Kosuke Funaki Tatsuya Matsunaga Yuhei Muraki

作者单位: Department of Electrical and Electronic Engineering, Akita University,1-1,Tegata-gakuen, Akita 010-8 Department of Electrical and Electronic Engineering, Akita University,1-1, Tegata-gakuen, Akita 010-

会议类型: 国际会议

会议名称: The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)

会议地点: 杭州

会议语种:英文

页码: 1-3

在线出版日期: 2012-11-05（万方平台首次上网日期，不代表论文的发表时间）