FABRICATION OF Cu2ZnSn(S,Se)4 FILMS BY PRINTING AND HIGH-PRESSURE SINTERING

摘要：

　　We prepared a Cu2ZnSn(SxSe1-x)4 (CZTSSe) solid solution with 0 ≤ x ≤ 1.0.The CZTSSe solid solutions with kesterite structure were synthesized by heating the elemental mixtures at 550℃ for 5 h in an N2 gas.The lattice parameters,a and c,monotonically decreased with increasing S content.Then we fabricated CZTSSe films by a printing and high-pressure sintering (PHS) process.The band gap energy (Eg) of CZTSSe solid solution films was determined from the transmittance and diffuse reflectance spectra.The Eg monotonically increased from 1.05 eV for CZTSe to 1.51 eV for CZTS.

作者: Feng Gao Tsuyoshi Maeda Takahiro Wada

作者单位: Department of Materials Chemistry, Ryukoku University, Seta, Otsu 520-2194, Japan

会议类型: 国际会议

会议名称: The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)

会议地点: 杭州

会议语种:英文

页码: 1-3

在线出版日期: 2012-11-05（万方平台首次上网日期，不代表论文的发表时间）