Low temperature PLD growth of a polycrystalline WS2 for photovoltaics
As the demand for more efficient and economically lucrative solar cells is growing,alternative materials start gaining more attention in recent years.1,2 One of these promising materials is tungsten disulphide (WS2).WS2 is a layered-structured p-type semiconductor with an indirect band gap at 1.29 eV,and a direct transition starting around 1.7 eV.3 It is a good absorber of solar radiation as its coefficient exceeds 105 cm-1 for photon with energies higher than 1.75 eV.As a feature for layered semiconductor,its transport properties are anisotropic,where it is excellent along the layer plane.The minority carrier diffusion length has been estimated to be in the range of ten to hundreds of microns for bulk samples.2,4,5,6 However,the transport between the layers is evidently not as good.Due to its layered structure,growing crystalline WS2 is challenging and it is not uncommon to have amorphous thin films.In this work,polycrystalline WS2 thin films were grown on STO substrates at relatively low growth temperatures for photovoltaics using pulsed laser deposition (PLD).Good films are obtained at 250℃ and 300℃.They exhibit indirect gap behavior around 1.35 eV.
Salman Alfihed Mohammad Hossain Abdulaziz Alharbi Ahmed Alyamani Fahhad Alharbi
King Abdulaziz City for Science & Technology, Riyadh, Saudi Arabia Qatar Environment & Energy Research Institute, Doha, Qatar Foundation King Abdulaziz City for Science & Technology, Riyadh, Saudi Arabia;Qatar Environment & Energy Resear
国际会议
The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)
杭州
英文
1-4
2012-11-05（万方平台首次上网日期，不代表论文的发表时间）