Investigation of physical properties of transparent conductive oxide Sn-doped ZnO thin films prepared by pulsed laser deposition

摘要：

　　ZnO semiconductor has a wide band gap (3.37eV) and large exciton binding energy of 60meV.ZnO exhibits non-toxicity,high transparency,a wide range of conductivity from metallic to insulating,and high crystallinity.

作者: Chin-Lung Chiou Horng-Show Koo Lin-Song Weng Chi-Hwa Cheng Hui-Ming Lin Maw-Kuen Wu Yu-Ruei Wu

作者单位: Institute of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401 Ta Institute of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401 Ta Institute of Physics, Academia Sinica, Nankang 115 Taipei Taiwan

会议类型: 国际会议

会议名称: The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)

会议地点: 杭州

会议语种:英文

页码: 1-1

在线出版日期: 2012-11-05（万方平台首次上网日期，不代表论文的发表时间）