Low Temperature Device Characteristics of Cu(In,Ga)Se2 Solar Cell Studied by Numerical Modeling
In this work,a simulation study was implemented by using a solar cell simulation software,wxAMPS,to investigate the physical mechanisms behind the experimental phenomenon of Cu(In,Ga)Se2 (CIGS) solar cells at low temperatures (less than 300 K).It is found that the saturation of open-circuit voltages at very low temperatures is related to the existence of the reverse Schottky barrier at the back contact.Through the modeling research,we also found that the effects of the heterojunction barrier at the interface of CdS/CIGS are responsible for the varying trends of short-circuit currents and series resistance at low temperatures.
Yiming Liu Wei Liu Yun Sun
Institute of Photo-Electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, P.R.China
国际会议
The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)
杭州
英文
1-5
2012-11-05（万方平台首次上网日期，不代表论文的发表时间）