Effect of the Sputtering Power on the Cell performance in the ZnS/CIGS Solar Cells
ZnS is a candidate to replace CdS as the buffer layer in Cu(In,Ga)Se2 (CIGS) solar cells for Cd-free commercial product.However,the resistance of ZnS is too large and the photoconductivity is too small.Therefore,the thickness of the ZnS should be as thin as possible.However,a CIGS solar cell with a very thin ZnS buffer layer is vulnerable to the sputtering power of the ZnO:Al window layer deposition due to plasma damage.We have found that the efficiency of a CIGS solar cell consistently decreases with an increase in the sputtering power for the ZnO:Al window layer deposition onto the ZnS buffer layer due to plasma damage.To protect the ZnS/CIGS interface,a bilayer ZnO:Al film was developed.It consists of a 50-nm-thick ZnO:Al plasma protection layer deposited at a sputtering power of 50 W and a 100-nm-thick ZnO:Al conducting layer deposited at a sputtering power of 200 W.The introduction of a 50-nm-thick ZnO:Al layer deposited at 50 W prevented plasma damage by sputtering,resulting in a high open circuit voltage,a large fill factor and shunt resistance.The ZnS/CIGS solar cell with the bilayer ZnO:Al film yielded a cell efficiency of 14.68%.
D.H.Shin J.H.Kim Y.M.Shin K.H.Yoon E.A.Al-Ammar B.T.Ahn
Korea Advanced Institute of Science and Technology, Daejeon, Republic of Korea Korea Institute of Energy Research, Daejeon, Republic of Korea King Saud University, 11451, Kingdom of Saudi Arabia
国际会议
The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)
杭州
英文
1-5
2012-11-05（万方平台首次上网日期，不代表论文的发表时间）