The passivation research of HIT solar cells interface
HIT (Hetero-junction with Intrinsic Thin-Layer) solar cells have extensive application prospects with the advantages of low temperature deposition,excellent stability and high efficiency.With the strong influence of a-Si: H/c-Si interface defects to the performance of HIT solar cells,a-Si: H/c-Si interface passivation has been the hot topic in the field of HIT solar cells.In our work,in order to improve the conversion efficiency of HIT solar cells,we have researched the influence of interface state density on the performance of HIT solar cells by simulating the solar cells and doing some experiments.The simulation results show that the interface states have a strong influence on the open-circuit voltage Voc,fill factor FF and conversion efficiency Eff.Also we have done some experiments to analyze the interface passivation effects by minority carrier lifetime and surface photovoltage spectroscopy (SPS) measurements.
Hao Li Xiangbo zeng Xiaobing Xie Ping Yang Jingyan Li Qiming Wang
State Key Lab on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
国际会议
The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)
杭州
英文
1-8
2012-11-05（万方平台首次上网日期，不代表论文的发表时间）