Influence of low temperature annealing on the performances of amorphous silicon germanium thin film solar cells

摘要：

　　In this study,the performances of p-i-n a-SiGe:H solar cell were investigated post annealing at different temperatures.When the annealing temperature was 190℃,the best performance of solar cell was obtained.The efficiency of solar cell was improved by almost 40% in comparison to non-annealing.We have observed the enhancement in quantum efficiency spectra at long wavelength post annealing.This might be attributable to there being significantly less absorption in intrinsic layer.To analyze the cause of annealing further,microstructural properties of the a-SiGe:H thin films were investigated post annealing at different temperatures.The results showed the annealing process led to a reduction in the network defects and improvement in the film microstructure.

作者: G.H.Wang B.J.Yan L.Zhao H.W.Diao W.J.Wang

作者单位: Key Laboratory of Solar Thermal Energy and Photovoltaic System of Chinese Academy of Sciences, Institute of Electrical Engineering, the Chinese Academy of Sciences, Beijing 100190, China

会议类型: 国际会议

会议名称: The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)

会议地点: 杭州

会议语种:英文

页码: 1-4

在线出版日期: 2012-11-05（万方平台首次上网日期，不代表论文的发表时间）