Fabrication and luminescence from doped nanocrystalline Si /SiO2 multilayers

摘要：

　　In this work,we fabricated doped nc-Si/SiO2 multilayers by introducing phosphorus (P)/boron (B) to obtain p-type/n-type nc-Si in plasma enhanced chemical vapor deposition system.It is found that the photoluminescence peak position and intensity can be tailored by controlling the doping types and the annealing temperature.The effective doping was demonstrated and it may help us to further understand the light emitting mechanism.

作者: Weiwei Mu Hongcheng Sun Jie Xu Jun Xu Wei Li Kunji Chen

作者单位: Nanjing National Laboratory of Microstructures, School of Electronic Science and Engineering and School of Physics, Nanjing University, Nanjing 210093

会议类型: 国际会议

会议名称: The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)

会议地点: 杭州

会议语种:英文

页码: 1-3

在线出版日期: 2012-11-05（万方平台首次上网日期，不代表论文的发表时间）