High-Pressure Water Vapor Treatment for Poly-Crystalline Silicon Germanium Thin Films
High-pressure water vapor treatment (HWVT) has been investigated for poly-crystalline silicon germanium (p-SiGe) and germanium (p-Ge) thin film.The optical absorption coefficients of p-SiGe and p-Ge are decreased by the HWVT,indicating that the midgap defect density is reduced.The dark conductivity is decreased by the HWVT.It is suggested that the acceptor-like dangling bound states are terminated by hydrogen (H) atoms.The effect is more significant for p-SiGe than p-Ge,due to higher binding energy of Si-H.
Hikaru Murano Takeru Sagisaka Masao Isomura
Course of Electrical and Electronic System, Graduate School of Engineering,Tokai University 4-1-1 Kitakaname, Hiratsuka-shi, Kanagawa 259-1292, Japan
国际会议
The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)
杭州
英文
1-4
2012-11-05（万方平台首次上网日期，不代表论文的发表时间）