Microcrystalline silicon-germanium solar cell with band-gap multiple-profiled intrinsic layer

摘要：

　　In this work,hydrogenated microcrystalline silicon-germanium (μc-SiGe:H) solar cells with a novel multiple-profiled structure in which the Ge content of the intrinsic layer changes in a substantial portion of the bulk have been designed.By comparing different types of profiling structure,the normal profiling structure combined with a high Ge content μc-SiGe:H layer,a Ge content grading layer and a μc-Si:H layer has been demonstrated.This structure exhibits higher short-circuit current density (Jsc) than conventional cell design with the same Ge content.As the result,an initial efficiency of 6.56% (Jsc=23.8 mA/cm2,Voc=0.457 V,FF=0.602) has been achieved by μc-SiGe:H single junction solar cell with this novel cell structure.

作者: Yu Cao Jianjun Zhang Tianwei Li Zhenhua Huang Jun Ma Jian Ni Ying Zhao

作者单位: Institute of Photo-electronic Thin Film Devices and Technique,Nankai University, Tianjin 300071, China

会议类型: 国际会议

会议名称: The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)

会议地点: 杭州

会议语种:英文

页码: 1-4

在线出版日期: 2012-11-05（万方平台首次上网日期，不代表论文的发表时间）