Fabrication of Si Quantum Dots/SiC Multilayers for All-Si Solar Cells

摘要：

　　In this study,amorphous Si/SiC multilayers were fabricated in plasma enhanced chemical vapor deposition (PECVD) system.As-deposited films were subsequently annealed at 900℃ to form Si quantum dots (QDs)/SiC stacked structures.The microstructures and optical properties were studied.The cells containing Si QDs/SiC stacked structures were prepared.The photovoltaic properties were observed and a good spectral response in a wide spectral range (400nm-1000nm) can be achieved.It was also found that by reducing the SiC barrier thickness,the external quantum efficiency can be improved significantly due to the better carrier collections.

作者: Y.Q.Cao S.X.Li J.Xu Y.J.Rui K.J.Chen Y.H.Zuo Q.M.Wang

作者单位: Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nan Institute of Semiconductors, Beijing 100083, China

会议类型: 国际会议

会议名称: The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)

会议地点: 杭州

会议语种:英文

页码: 1-3

在线出版日期: 2012-11-05（万方平台首次上网日期，不代表论文的发表时间）