Contribution of As source gas to N-H defect formation in GaAsN grown by chemical beam epitaxy
The contribution of the As source to the formation of the N-H related defects in the growth process of (In)GaAsN solar cell are studied.The IR absorption peaks at 3098 cm-1 and 2952 cm-1 are found to be originated from the different N-H related defects.Further,it is found that H atoms in the As source contributes to the formation of the N-H defect with the vibration mode at 3098 cm-1,while it does not contribute to the formation of the defect at 2952 cm-1.The result indicates that the density of each N-H defect can be controlled independently,which leads to revealing the origin of the residual acceptors.
K.Ikeda M.Inagaki N.Kojima Y.Ohshita M.Yamaguchi
Toyota Technological Institute, 2-12 Tempaku, Hisakata, Nagoya, Aichi, 468-8511, JAPAN
国际会议
The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)
杭州
英文
1-3
2012-11-05(万方平台首次上网日期,不代表论文的发表时间)