Effect of strain on the formation of antibonding hole ground states in InAs quantum dot moleculs

摘要：

　　A six-band k · p model was used to study two lowest single-particle hole states in two vertically coupled InAs/GaAs quntum dots (CQDs) by interdot distance.The elastic strain due to the lattice mismatch between InAs and GaAs was inclued into the problem.Strain effects play the dominant role in the band offset and affects the hole states of the coupled dot system.The calculation shows that the cirtical inter-dot distance is about 2nm,above which the hole ground states are anti-bonding-like.The strain in the dot molecule decrease the critical inter-dot distance and makes the ground states more confined on the bottom dots.

关键词： coupled quantum dots strain antibonding ground-state six-band k · p model

作者: Naiyun Tang

作者单位: Department of Electronic Science and Technology,Shanghai University of ElectricPower,Shanghai,200090,China

会议类型: 国际会议

会议名称: 中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)

会议地点: 杭州

会议语种:英文

页码: 1-6

在线出版日期: 2012-11-04（万方平台首次上网日期，不代表论文的发表时间）