Low-Temperature Amorphous Si/Au Wafer Bonding
The amorphous Si/Au wafer bonding with different Au/Si ratio was investigated in this work.The bond yield above 94% and the average shear strength above 10.1 MPa have been achieved by the bonding method at 400 ℃ applying 1 MPa pressure for 30 min in vacuum.The results of bonding quality test showed that the bond yield was independent of Au/Si ratio,and high shear strength was obtained when the Au/Si ratio below 10:1.The microstructure analysis suggested that the Si grains were distributed randomly in the bonded layer and Au filling with the other region of the bonded layer,which resulted to a void-free bonded layer.The void-free bonded layer of the amorphous Si/Au bonding with different Au/Si ratio improved the bonding quality,and enables the feasibility of Au/Si eutectic bonding for wafer bonding applications
Wafer bonding amorphous Si/Au microstructure analysis bonding quality
Mifeng Liu Dehui Xu Bin Xiong Yuelin Wang
State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Tec State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Tec
国际会议
中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)
杭州
英文
1-5
2012-11-04（万方平台首次上网日期，不代表论文的发表时间）