Investigation of Lag Effect in Trench Etching Process
The phenomena of lag effect and inverse lag effect is depended on the aspect-ratio-dependent etching (ARDE).In this paper,a model of etching and deposition is set up to illuminate the lag phenomena.Four factors-Three levels orthogonal experiment design is used to obtain the priority of parameters which influence the etching process most.The pressure and flow rate at a low ICP power is also investigated.At last,the inverse lag and lag free structures with a vertical profile are achieved by using the low ICP power and plate power.
ARDE, lag effect inverse lag effect balance orthogonal experiment
Y.K.Song L.Teng H.Xiong
Flight Automatic Control Research institute, XI’AN, ShaanXi, CHINA
国际会议
中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)
杭州
英文
1-5
2012-11-04(万方平台首次上网日期,不代表论文的发表时间)