Study and Fabrication of Aluminium Nitride Based EWOD Device

摘要：

　　We have demonstrated an Electrowetting-on-Dielectrics (EWOD) device using aluminium nitride (AlN) as the dielectric layer.The high dielectric constant of AlN creates strong capacitive coupling between the liquid droplet and the underlying electrode,which allows efficient contact angle switching with moderate operating voltages.The EWOD device also benefits from the excellent dielectric strength of AlN and is able to work reliably under high electrical fields (roughly 200MV/m).Most importantly,AlN is the piezoelectric material commonly used in acoustic resonators,an emerging and important sensing platform in a wide variety of biomedical applications.The adoption of AlN in EWOD devices would enable seamless integration of the sensing and the actuating units.In addition,we have modified the contact angle equation for thin-dielectric EWOD devices and achieved better matching between the experimental and the calculated data.

关键词： EWOD AlN Integration LOC

作者: Menglun Zhang Daihua Zhang Wei Pang Xiaotang Hu Hongyuan Zhao Hao Zhang

作者单位: Sate Key Laboratory of Precision Measuring Technology & Instruments, Tianjin University,Tianjin, China

会议类型: 国际会议

会议名称: 中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)

会议地点: 杭州

会议语种:英文

页码: 1-6

在线出版日期: 2012-11-04（万方平台首次上网日期，不代表论文的发表时间）