Simulation research of the long-base silicon magnetic sensitive diode negative-resistance characteristics on the base of ATLAS

摘要：

　　According to the experimental results of the long-base silicon magnetic sensitive diode,this paper adopted ATLAS software to establish the two dimensional simulation model in order to research the negative resistance characteristics of the long-base silicon magnetic sensitive diode.Deep impurities were introduced into the long base to study the effect of the concentration and the distribution of deep impurities on the current-voltage characteristics of the long-base silicon magnetic sensitive diode.The simulation results showed that the deep impurity in the long base was the main factor that impacted on the negative resistance characteristics of the long-base silicon magnetic sensitive diode.

关键词： long-base silicon magnetic sensitive diode negative resistance characteristics deep impurities ATLAS

作者: Zhao Xiaofeng Li Lei Wang ping Wen Dianzhong Li Gang

作者单位: Key Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University Key Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University

会议类型: 国际会议

会议名称: 中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)

会议地点: 杭州

会议语种:英文

页码: 1-6

在线出版日期: 2012-11-04（万方平台首次上网日期，不代表论文的发表时间）