Fabrication and characteristics of the nano-polysilicon thin film transistors

摘要：

　　In this paper,we report the fabrication and characteristics of the top-gated thin film transistors (TFTs) with nano-polysilicon as active layers.The nano-polysilicon thin films were deposited on SiO2 layers by LPCVD and the SiO2 layers were grown on the single silicon substrates.Then the nano-polysilicon thin film transistors with different thin film thicknesses and different channel width length radios were fabricated by CMOS technology,in which the thicknesses of channel layers were 90nm and 120nm,and the channel width length radios were 160μm/160μm,320μm/160μm and 640μm/160μm,respectively.The experiment results show that drain current is in proportion to channel width length radio.In addition,when the thickness of the nano-polysilicon thin film is 90nm and the channel width length radio is 640μm/160μm,the on/off current radio reaches 106.Introduction

关键词： nano-polysilicon thin film transistors CMOS technology LPCVD

作者: Zhao Xiaofeng Wen Dianzhong Zhuang Cuicui Han Bing

作者单位: Key Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University Key Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University

会议类型: 国际会议

会议名称: 中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)

会议地点: 杭州

会议语种:英文

页码: 1-5

在线出版日期: 2012-11-04（万方平台首次上网日期，不代表论文的发表时间）