a analytical method for calculating curvature of circular silicon wafer caused by boron doping

摘要：

　　Doping can lead to residual strain and change of elastic properties in silicon.Residual strain makes silicon wafer exhibit curvature,which are used for fabricate MEMS structure.The boron doping profile is not uniform through depth,which makes doped silicon become a inhomogeneous material or Functionally Graded Material.For boron-doped circular single crystal silicon wafer,a analytical method which based on functionally graded plate mechanics theory,is proposed to calculate its curvature.Example was used to verify the analytical method through 3D finite element simulation.

关键词： boron doping residual strain silicon wafer curvature functionally graded plate

作者: HE Jiangbo XIE Jin ZHOU Wu WEI Wei

作者单位: School of Mechanical Engineering, Southwest Jiaotong University, Chengdu, China Department of Mechanical Engineering, University of ElectronicScience and Technology,Chengdu, China

会议类型: 国际会议

会议名称: 中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)

会议地点: 杭州

会议语种:英文

页码: 1-6

在线出版日期: 2012-11-04（万方平台首次上网日期，不代表论文的发表时间）