Growth and photoluminescence of GaAs Heterostructure Nanowires

摘要：

　　GaAs/AlGaAs and GaAs/InAs/GaAs/AlGaAs core-shell heterostructure nanowires are grown by Ga-assisted catalyst-free method on Si (111) substrates.Scanning electron microscopy,transmission electron microscopy and micro photoluminescence spectroscopy are investigated to demonstrate the core-shell heterostructure.InAs quantum dots form on the surface of GaAs nanowires by low temperature growth.It should be easier to grow branched GaAs/AlGaAs core-shell nanowires when InAs quantum dots grown on the surface of GaAs.The junctions of branches are InAs quantum dot demonstrated by Energy dispersive spectroscopy and micro photoluminescence spectroscopy.The small second order correlation function at zero-delay g2(0) implies that this heterostructure has a low multi-photon emission probability.

关键词： Nanowires molecular beam epitaxy quantum dots optical properties

作者: MiFeng Li Ying Yu JiFang He GuoWei Zha LiJuan Wang HaiQiao Ni XiuMing Dou BaoQuan Sun ZhiChuan Niu

作者单位: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, ChineseAcademy of Sciences, P.O. Box 912,Beijing 100083, China

会议类型: 国际会议

会议名称: 中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)

会议地点: 杭州

会议语种:英文

页码: 1-7

在线出版日期: 2012-11-04（万方平台首次上网日期，不代表论文的发表时间）