Single Mask Selective Release Process for Complex SOI MEMS Device
We present a single mask selective release process for complex SOI MEMS device.Comparing to the one-step dry release process,there are two improvements,the first one is to ensure that the bottom of the suspension beams will not be notching,and have sufficient strength and rigidity,the second one is to ensure that the released structures will not be damaged during wafer dicing.According to the proposed design rules,in the dry release step,most of the device area is released,except the boundaries of the proof mass and the suspension beams.Then,in the wet release step,all the structures will be released,and also increased the gap below the structure.So the suspension beams is protect enabled that the device has sufficient rigidity and not easy to break.To verify this method,a micromachined gyroscope is fabricated and test.
selective release, notching, MEMS, silicon on insulator (SOI), single mask
Jianbing XIE Yongcun HAO Honglong CHANG Weizheng YUAN
1,2,3,4Key Laboratory of Micro/Nano Systems for Aerospace, Ministry of Education, NorthwesternPolytechnical University P.O.Box 638, 127＃ Youyi West Road, Xi’an 710072, Shaanxi, China
国际会议
中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)
杭州
英文
1-6
2012-11-04（万方平台首次上网日期，不代表论文的发表时间）