ApplicatioApplication of Multi-mask on Clearing the UV- Nanoimprint Lithography Residual Resist

摘要：

　　UV-Nanoimprint Lithography(NIL) has been widely used in manufacturing gratings of Distributed Feedback Laser Diodes(DFB LDs) due to its high-resolution and low cost.However,UV-curable resist turns into high polymer after UV-exposure,which always can’t be eliminated completely,and the residual resist will affect following process and degrade devices performance.In this paper,a Multi-mask layer process to eliminate residual resist was demonstrated.In this process,a thin hard mask is deposited between wafer and UV-curable resist.

关键词： DFB LDs Nanoimprint lithography residual resist

作者: Xin CHEN Jianyi ZHAO Lei WANG Ning ZHOU Wen LIU

作者单位: Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering,Huaz State Key Laboratory for New Optics Communication Technologies andNetworks,Wuhan,430074,China Accelink Technologies Co.Ltd.,Wuhan 430074,China Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering,Huaz

会议类型: 国际会议

会议名称: 中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)

会议地点: 杭州

会议语种:英文

页码: 1-4

在线出版日期: 2012-11-04（万方平台首次上网日期，不代表论文的发表时间）