Research on Air -Media Mixed Substrate Technology of GaAs Based Millimeter Wave Antenna
Becoming another key technology for system integration,GaAs based millimeter wave antenna is fabricated by MEMS technology,with high permittivity dielectric substrates.To obtain good performance,it is necessary to achieve the equivalent of low dielectric constant of the local area below microstrip patch antenna.The article describes deep etching fabrication and multiple etching with thick photoresist masking to creat air cavity under the microstrip patch which usually has the height from 70% to 80% of the original media substrate,thus it forms the air-mixed media substrate.Especially for precision control of the substrate thickness,use back thinning and high-precision polishing processes.At last realize back cavity depth of 227μm in the GaAs substrate and complete the process of Ka band MEMS patch antenna.The measurement results: the center frequency is 37.9 GHz,bandwidth is 4.4%,radiation efficiency above 50%.
GaAs based patch antenna air-media mixed substrate dry etching thinning and polishing process
Guoqing Jiang Shixing Jia Fang Hou Jian Zhu
Nanjing Electronic Devices Institute, Nanjing China 210016
国际会议
中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)
杭州
英文
1-6
2012-11-04（万方平台首次上网日期，不代表论文的发表时间）