A single FBAR-based temperature and pressure sensors
A novel temperature and pressure sensor based on a single film bulk acoustic resonator (FBAR) is designed.This FBAR support two resonant modes,which response opposite to the change of temperature.By sealed the back cavity of a back-trench membrane type FBAR with silicon wafer,an on-chip single FBAR sensor suitable for measuring temperature and pressure simultaneously is proposed.For unsealed device,the experimental results show that the first resonant mode has a temperature coefficient of frequency (TCF) of 69.5ppm/K,and the TCF of the second mode is -8.1ppm/K.After sealed the back trench,it can be used as a pressure sensor,the pressure coefficient of frequency (PCF) for the two resonant mode is -17.4ppm/kPa and -6.1 ppm/kPa respectively,both of them being more sensitive than other existing pressure sensors.
FBAR sealed cavity temperature pressure
X.L.He L.Garcia-Gancedo P.C.Jin J.Zhou A.J.Flewitt W.I.Milne J.K.Luo
Dept. Info. Sci. & Electron. Eng., Zhejiang University, Hangzhou 310027, China Elec. Eng. Div., Cambridge University, Cambridge CB3 0FA, U.K Dept. Info. Sci. & Electron. Eng., Zhejiang University, Hangzhou 310027, China;Inst. Mater. Res. & I
国际会议
中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)
杭州
英文
1-5
2012-11-04（万方平台首次上网日期，不代表论文的发表时间）