Fabrication of low stress PECVD-SiNx film in high frequency mode

摘要：

　　A new fabrication method to produce low residual stress PECVD SiNx layers at high frequency (13.56 MHz)was developed.High frequency up to 60W is employed in this new method to fabricate low stress SiNx.By adjusting the composition of reactant gases,process vacuum and the chamber temperature,the residual stress can be lower to -0.28 MPa,and high deposition rate up to 240 nm/min can be achieved.In addition,this paper investigated the influence of other important parameters on the results,such as pressure,power and gases flow rates.Moreover,by using the optimal process,the refractive index is ranged from 1.98 to 2.20,and the uniformity of run to run wafers is about ±3% for 4 inch wafers.Finally,a typical FBAR (film bulk acoustic wave resonator) structure using these low stress PECVD SiNx layers as solid layer and mask indicated that these layers are compatible in IC technology and suitable for using in fabricating MEMS(microelectromechanical systems) devices.

关键词： PECVD refractive index residual stress uniformity MEMS device

作者: Zhengguo SHANG Dongling LI Shengqiang WANG

作者单位: Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology, ChongqingUniversity, Chongqing 400030, CHINA;National Center for International Research of Micro/Nano-System and New Material Technology,Chongqing University, Chongqing 400030, CHINA

会议类型: 国际会议

会议名称: 中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)

会议地点: 杭州

会议语种:英文

页码: 1-5

在线出版日期: 2012-11-04（万方平台首次上网日期，不代表论文的发表时间）