A SOI-MEMS Piezoresistive Atmosphere Pressure Sensor

摘要：

　　In this paper,a SOI-MEMS (silicon on insulator- micro electro mechanical system) pizeoresistive atmosphere pressure sensor is presented using anodic bonding.Differently from the prevailing fabrication process of silicon piezoresistive pressure sensor: the device layer monocrystalline of SOI silicon wafer is used as the strain gauge with a simple deep etching process; and the SiO2 layer of SOI silicon wafer as the insulator between strain gauge and substrate.The whole fabrication processes of the designed sensor are very simple,and can reduce the cost of sensor.The Pressure-Voltage characteristic test results suggest a precision within 0.14% in linear fitting.It is shown that the temperature coefficient is 2718ppm/℃ from the Typical temperature curve of the pressure sensors.

关键词： MEMS Pressure Sensor Piezoresistive

作者: Lidong Du Zhan Zhao Li Xiao Meng ying Zhang Zhen Fang

作者单位: State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy ofSciences, State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy ofSciences,

会议类型: 国际会议

会议名称: 中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)

会议地点: 杭州

会议语种:英文

页码: 1-4

在线出版日期: 2012-11-04（万方平台首次上网日期，不代表论文的发表时间）