The key technologies of SOI micro-accelerometer front release process
In order to develop the SOI micro-accelerometer front release process,this paper discusses in details the key technologies of the process.There are three problems need to be resolved: the corrosion of the electrode,the corrosion rate of the buried silicon dioxide layer as well as the anti-adhesion of the micro-structure.The corrosion characteristic of the electrode is studied,and a metal electrode of high ability of anti-HF acid corrosion is designed,after release of the micro-structure,the electrode does not fall off.The corrosion property of the buried silicon dioxide is studied,and the corrosion rate is exactly known for 2um and 5um thick buried silicon dioxide layer.Based on this,the buried silicon dioxide layer etching time can be controlled,preventing over-etching of the oxide layer.The adhesion of comb fingers and the mass with the substrate is settled at last.By electron microscopy tests,found that the process can get a good micro-structure surface,with smaller footing effects.By test,the sensitivity of the accelerometer is about 144.5mv/g.
MEMS SOI Micro-accelerometer Positive release process
ZHANG Zhao-yun SHI Zhi-gui HE Xiao-ping DU Lian-ming ZHANG Hui PENG Bo
Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621900, China
国际会议
中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)
杭州
英文
1-6
2012-11-04（万方平台首次上网日期，不代表论文的发表时间）